MOHAMED OSMAN

 

Professor
School of Electrical Engineering and Computer Science
Washington State University
Pullman, WA 99164
(509) 335-2301
Internet: osman@eecs.wsu.edu

 

Research

My areas of research include: 

1. high temperature electronics: reliability and parameter extraction, SPICE model development, transport in wide band gap semiconductors. 

2. Ultrafast optical and electronic processes investigation: carrier-carrier interaction, dynmaic screening and coherent phenomena using Monte Carlo simulation. 

3. Submicron device and process simulation, field emission devices, SOI devices. 

4. Thermal Properties of Carbon nanotubes using molecular dynamics simulations.

 

Teaching:

EE 214: Digital Logic Circuits
EE 311: Microelectronic Circuits
EE 351: Distributed Parameter Syatems
EE 496: Physics of Semiconductor Devices
EE 478/578: Microelectronic Fabricaton
EE 431: RF and Microwave Circuits and Systems
EE/PHYS 514: OPTOELECTRONICS LABORATORY
EE 574: Optoelectronics
EE 597: RF MOSFET Modeling

Teaching Profile

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Family Pictures

Recent Publications

A.A. Osman, M.A. Osman, N.S. Dogan, and M.A. Imam, "Extended Tanh Law MOSFET Model for High Temperature Circuit Simulation," IEEE Journal of Solid State Circuits , Vol. 30, 108-11, February 1995.

A.A. Osman, M.A. Osman, N.S. Dogan, and M. Imam, "Zero Temperature Coefficient Bias Points of Partially-Depleted SOI MOSFETS," IEEE Trans. Electron Devices, Vol. 42, Sept. 1995.

N. Nintunze and M.A. Osman, "Hole Drift Velocity in Warped Band Model of GaAs," Semiconductor Science & Technology , Vol. 10, 11-17 (1995)..

R. Rodrigues, M. Sailor, P. Buchberger, R.A. Hopfel, N. Nintunze, and M.A. Osman, "Ultrafast energy loss of electrons in p-GaAs," Applied Physics Letters, Vol. 67, (July 1995).

M.A. Imam, M.A. Osman, and A.A. Osman, "MOSFET Global Modeling for Deep Submicron Devices with a Modified BSIM1 Spice Model," IEEE Trans. Computer Aided Design, vol. 15, pp. 446-451, 1996.

P.D. Pedrow, K. Goyal, R. Mahalingam, and M.A. Osman, "Explosion model applied to an intense pulsed plasma source for thin film deposition," IEEE Trans. on Plasma Science, vol. 25, pp. 89-96, 1997.

M.A. Imam, M.A. Osman, and A.A. Osman, "Threshold Voltage Model for deep-Submicron Fully Depleted SOI MOSFETs with Back gate Substrate Induced Surface Potential Effects," Journal of Microelectronics Reliability, vol.39 , pp. 487-495 , 1999.

M.A. Imam, H. Fu, M.A. Osman, and A.A. Osman,"A simple method to determine the floating body voltage of SOI CMOS devices," IEEE Electron Dev. Lett., vol. 21,pp. 21-23, 2000

M.A. Imam, H. Fu, M.A. Osman, and A.A. Osman, "Determination and assessment of the floating body voltage of SOI CMOS devices," IEEE Trans. Electron Dev. vol. 48, pp. 688-695, 2001

L.V. Shepsis, P.D. Pedrow, R. Mahalingham, and M.A. Osman, "Modeling and Measurement of Monomer Pressure Evolution in Inductively Coupled Pulsed Plasma Reactor for Thin Polymer Films," IEEE Trans. On Plasma Science Vol. 28, pp. 2172-2178, 2000.

M.A. Osman and D. Srivastava, "Temperature Dependence of the Thermal Conductivity of Carbon Nanotubes," NanotechnologyVol. 12 No 1, pp 21-2, 2001.

L.V. Shepsis, P.D. Pedrow, R. Mahalingham, and M.A. Osman, "Modeling and Experimental Comparison of Pulsed Plasma Deposition of Aniline," Thin Solid Films Vol. 385, pp. 11-21, 2001.

K.O. Goyal, R. Mahalingam, P.D. Pedrow and M. A. Osman,"Mass Transport Characteristics in a Pulsed Plasma Enhanced Chemical Vapor Deposition Reactor for Thin Polymer Film Deposition," IEEE Transactions on Plasma Science, Vol. 29, No. 1, February 2001.

A. Daghighi and M.A. Osman, “Two dimesnional Model for Simulation of Body Contacts in SOI MOSFETs,” Microelectronics Engineering,, Vol. 70,, pp. 83-90, 2003.

M.A. Imam, M.A. Osman, and A.A. Osman, “ Simulation of partially and near-fully depleted SOI MOSFET Devices and Circuits using SPICE compatible Physical sub-circuit model,” Microelectronics Reliability,, Vol. 44, pp. 53-63 (2004).

P.A. Tamirisa, K.C. Liddell, P.D. Pedrow, and M.A. Osman,” Pulsed Plasma Polymerized Aniline Thin Films,” J. Applied Polymer Science Vol. 93, pp. 1317-1325 (2004).

A. Cummings, M.A. Osman, D. Srivastava and M. Menon,"Thermal Conductivity of Y-junction Carbon Nanotubes," Phys. Rev. B. Vol. 70,, pp. 115405-115410 (2004).

R. Dhar, P.D. Pedrow, K.C. Liddell, Q. Ming, T.M. Moller, and M.A. Osman, “Plasma Enhanced MOCVD of Catalytic Coatings for Fuel Reformers,” (IEEE Transactions on Plasma Science( (in review).

Recent Conference Presentations/Publications

M. A.. Osman and A.A. Osman, "Characterization and Modeling of Partially Depleted SOI MOSFETs up to 300C," Proceedings of the Workshop on High Temperature Power Electronics for Vehicles, Fort Monmouth, New Jersey, April 1995.

A. A.. Osman and M,A. Osman, "Temperature Dependent Modeling of Subthreshold Conduction in PD SOI MOSFETs," Proceed. IEEE International Caracas Conference Circuits and Systems, Caracas, Venezuela, Dec. 1995.

M.A. Osman and N. Nintunze, "Sub-Picosecond Luminescence Spectra of Photoexcited Electrons Relaxation in p-GaAs," Hot Carriers in Semiconductors, K. Hess, J-P. Leburton, and U. Ravaioli, Editors, pp. 117-120, Plenum (1996).

M. A. Osman and A.A. Osman, "High Temperature SPICE Modeling of Partially Depleted SOI MOSFETs," Proceeding of the 13th Symposium on Space Nuclear Power and Propulsion, CONF 960109, M.S. El-Genk, ed. American Institute of Physics, New York, AIP Conf. Proc. No. 361, 3: 1355-1358, (1996).

M. Imam, M.A. Osman, and A.A. Osman, " Modeling the Threshold Voltage of Long and Short Channel Fully Depleted SOI MOSFETs with Back Gate Substrate Induced Surface Effects," Proceeding of the 21st International Conference on Microelectronics, Nis, Yugoslavia, Sept. 1997.

M.A. Osman, "Monte Carlo Simulation of the Effects of X6 and X7 Intervalley Scattering on the Ultrafast Relaxation of Photoexcited Carriers in GaAs," in Ultrafast Phenomena in Semiconductors III, K.T. Tsen & H.R. Fetterman, Editors, Proc. SPIE 3277(1998) .

M.A. Osman and Ashraf A. Osman, "Self-heating as a Tool for measuring sub-0.1 micron Silicon-on-Insulator device Parameters," in Ultrafast Phenomena in Semiconductors III, K.T. Tsen & H.R. Fetterman, Editors, Proc. SPIE 3277 (1998).

M.A. Osman and Ashraf A. Osman, "Analysis of Self-Heating Effects on Partially Depleted Silicon-on-Aluminum MOSFETs," Proceeding of 1998 High Temperature Electronics Conference.

A.A. Osman and M.A. Osman, "Investigation of High Temperature Effects on MOSFET Gate Transconductance," Proceeding of 1998 High Temperature Electronics Conference

M. Imam, M.A. Osman, and A.A. Osman, "Short Channel SOI MOSFETs Threshold Voltage Modeling with Induced Substrate Effects," in Proceedings of the Symposium on Giga Scale Integration Technology, M.A. Osman & O. Awadalla, Editors (1999)

P.D. Pedrow, R.G. Hogland, R. Mahalangam, and M.A. Osman, "Plasma Processing of Electro-active Polymers and Devices," in Proceedings of the Symposium on Giga Scale Integration Technology, M.A. Osman & O. Awadalla, Editors (1999).

A.A. Osman and M.A. Osman, "Self-heating Effects on the Gate Transconductance of SOI MOSFETs," in Proceedings of the Symposium on Giga Scale Integration Technology, M.A. Osman & O. Awadalla, Editors (1999).

L.V. Shepsis, P.D. Pedrow, R. Mahalingam, and M.A. Osman, "Computer Controlled Pulsed PECVD Reactor for Laboratory Scale Deposition of Plasma Polymerized Thin Films," Proceeding of 1999 Material Research Society Meeting, (in press).

M.A. Osman, "Monte Carlo Simulation of the Ultrafast Relaxation of Electrons in AlN," in Ultrafast Phenomena in Semiconductors IV, K.T. Tsen & Jin Joo Song, Editors (in press).

M.A. Osman, "Monte Carlo Simulation of NEA Field Emission Devices," The Second NASA Device Modeling Workshop, NASA Ames Research Center, Moffett Field, California, August 1997.

M.A. Osman and D. Srivastava, "Molecular Dynamics Simulation of the Thermal Conductivity of Carbon Nanotubes," presented at the 46th International Symposium of the American Vacuum Society, Seattle, Washington, October 1999.